Intel Corporation and Micron Technology, Inc., today announced a new benchmark in NAND flash technology first 20 nanometer, 128 gigabit, multilevel-cell MLC device. The companies also announced mass production of their 64Gb 20nm NAND. Developed through Intel and Micron's joint-development venture, IM Flash Technologies IMFT, the new 20nm monolithic 128Gb device is the first in the industry to enable a terabit Tb of data storage in a fingertip-size package by using just eight die. It also provides twice the storage capacity and performance of the companies' existing 20nm 64Gb NAND device. The 128Gb device meets the high-speed ONFI 3.0 specification to achieve speeds of 333 megatransfers per second MT/s, providing customers with a more cost-effective solid-state storage solution for today's slim, sleek product designs, including tablets, smartphones and high-capacity solid-state drives SSDs. Intel and Micron noted that the December production ramp of their 20nm 64Gb NAND flash product will enable a rapid transition to the 128Gb device in 2012.
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