Intel Corporation and Micron Technology, Inc., today announced a new benchmark in NAND flash technology first 20 nanometer, 128 gigabit, multilevel-cell MLC device. The companies also announced mass production of their 64Gb 20nm NAND. Developed through Intel and Micron's joint-development venture, IM Flash Technologies IMFT, the new 20nm monolithic 128Gb device is the first in the industry to enable a terabit Tb of data storage in a fingertip-size package by using just eight die. It also provides twice the storage capacity and performance of the companies' existing 20nm 64Gb NAND device. The 128Gb device meets the high-speed ONFI 3.0 specification to achieve speeds of 333 megatransfers per second MT/s, providing customers with a more cost-effective solid-state storage solution for today's slim, sleek product designs, including tablets, smartphones and high-capacity solid-state drives SSDs. Intel and Micron noted that the December production ramp of their 20nm 64Gb NAND flash product will enable a rapid transition to the 128Gb device in 2012.
Our website uses cookies for an optimal service. By using this website you agree, that we store personal data such as the IP address and that we use cookies together with third-party providers to display personalized ads for interest-based advertising and other external content. Do you agree? Yes / No AboutPrivacy